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DS: Fachverband Dünne Schichten

DS 20: Poster II

DS 20.18: Poster

Thursday, March 21, 2024, 18:00–20:30, Poster D

Epitaxial CVD growth of MoS2 on sapphire — •Blagovest Napoleonov¹, Dimitrina Petrova^{1, 2}, Daniela Karashanova¹, Peter Rafailov³, Vladimira Videva^{1, 4}, Velichka Strijkova¹, Dimitre Dimitrov^1,3, and Vera Marinova¹ — ¹Institute of Optical Materials and Technologies-BAS Sofia, Bulgaria — ²South-West University "Neofit Rilski", Blagoevgrad, Bulgaria — ³Institute of Solid State Physics-BAS, Sofia, Bulgaria — ⁴Sofia University, Sofia, Bulgaria

We present the epitaxial growth of MoS2 on sapphire substrate using low-pressure CVD method. The research focuses on optimizing the growth conditions to achieve reproducible results and explores the potential of conventional epitaxy for synthesizing crystalline nanoclusters/flakes of MoS2. By performing targeted substrates surface modification, we successfully achieve the desired epitaxial growth as confirmed by HRTEM. This research contributes to the development of scalable and high-quality Transition Metal Dichalcogenide (TMD) growth techniques, for practical applications.

Acknowledgements This work is supported by the Bulgarian National Science Fund under the grant number KP-06-COST/15; Research equipment of distributed research infrastructure INFRAMAT (part of Bulgarian National roadmap for research infrastructures) supported by Bulgarian Ministry of Education and Science; the European Regional Development Fund within the Operational Programme "Science and Education for Smart Growth 2014-2020" under the Project CoE "National Centre of Mechatronics and Clean Technologies" BG05M2OP001-1.001-0008-C01.

Keywords: Transition Metal Dichalcogenides (TMD); Epitaxial Growth; Chemical Vapor Deposition (CVD); Nanoclusters/Flakes Deposition