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DS: Fachverband Dünne Schichten

DS 20: Poster II

DS 20.1: Poster

Donnerstag, 21. März 2024, 18:00–20:30, Poster D

MBE-Growth Optimization and Optical Switching of Sb₂Te₃/GST-124 Superlattices — •Lucas Bothe¹, Peter Kerres¹, Lukas Conrads², Thomas Taubner², and Matthias Wuttig^1,2 — ¹Peter Grünberg Institute - JARA-Institute Energy Efficient Information Technology (PGI-10), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany — ²I. Institute of Physics (IA), RWTH Aachen University, 52056 Aachen, Germany

Phase change materials (PCMs) are promising candidates for future data storage and neuromorphic computing solutions. In these applications drastic property changes between the amorphous (covalent) and the crystalline (metavalent) phase are exploited to encode data. The practical disadvantage of PCMs is the high energy necessary to switch from the crystalline to the amorphous phase (RESET) due to the melt-quench step. Previous studies revealed that replacing a single-layer PCM, e.g. GST, by alternating layers of Sb₂Te₃/GST, called superlattices (SL), reduces the reset current by an order of magnitude.

Highly textured Sb₂Te₃/GST-124 superlattices were grown via Molecular Beam Epitaxy (MBE) and their structure was investigated with θ/2θ-scans. The structural investigation revealed that the grown superlattices coincidence with the targeted superlattice stoichiometry and periodicity indicating optimized MBE-growth. Furthermore, a laser switching set-up was used to locally switch the as-grown SLs to the amorphous phase. The laser switching results will be discussed regarding the energy efficiency of the superlattices in comparison with ordinary phase change materials.

Keywords: Superlattice; Sb2Te3; GST; MBE; XRD