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DS: Fachverband Dünne Schichten
DS 20: Poster II
DS 20.2: Poster
Thursday, March 21, 2024, 18:00–20:30, Poster D
Investigation of Ultrafast Carrier Dynamics in ScN Using Pump-Probe Time-Resolved Spectroscopic Ellipsometry — •Younes Slimi1,3, Johannes Laurenz Wolf1, Martin Zahradník2, Shirly Espinoza2, Mateusz Rebarz2, Rebecca Petrich1, Mohamed Bouafia3, Jakob Andreasson2, and Stefan Krischok1 — 1Technische Universität Ilmenau, Fachgebiet Technische Physik I, Weimarer Straße 32, 98693 Ilmenau, Germany — 2ELI Beamlines Facility, The Extreme Light Infrastructure ERIC, Za Radnici 835, 25241 Dolni Brezany, Czech Republic — 3Applied Optics Laboratory, Institute of Optics and Precision Mechanics, University of Setif 1, 19000, Setif, Algeria
Scandium nitride (ScN) is a promising material for optoelectronic applications owing to its wide band gap, high melting point, and chemical stability. With a band gap exceeding 2 eV, ScN serves as a suitable semiconductor for optoelectronics. Further investigation is warranted to comprehensively characterize its dielectric function, which is crucial for device development. Spectroscopic ellipsometry (SE) and pump-probe time-resolved SE (tSE) are employed to unravel the dielectric properties of ScN thin films, encompassing optical absorption, refractive index, and dielectric constant. Our findings reveal transient features in the dielectric function, shedding light on ultrafast carrier dynamics and relaxation processes. This comprehensive analysis advances our understanding of the material's fundamental behavior.
Keywords: ScN; Wide-band gap Semi conductors; Spectroscopic Ellipsometery; Time resolved Spectroscopic Ellipsometery; Transient Dielectric Function