Berlin 2024 – scientific programme
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DS: Fachverband Dünne Schichten
DS 20: Poster II
DS 20.24: Poster
Thursday, March 21, 2024, 18:00–20:30, Poster D
Non-destructive analysis for ScAlN based MEMS — •Rebecca Petrich1, Younes Slimi1, Hauke Honig2, Daniel Glöß3, Stephan Barth3, Hagen Bartzsch3, Raphael Kuhnen4, Dietmar Frühauf4, Rüdiger Schmidt-Grund1, Stefan Krischok1, and Katja Tonisch1 — 1TU Ilmenau, FG Technische Physik I, IMN MacroNano, 98693 Ilmenau — 2TU Ilmenau, FG Werkstoffe der Elektrotechnik, IMN MacroNano, 98693 Ilmenau — 3Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP, 01277 Dresden, Germany — 4Endress+Hauser SE+Co. KG, TTD Technologieentwicklung, 79689 Maulburg
ScAlN is an attractive alternative to traditional quartz- or lead-based piezoelectric materials due to its high piezoelectric coefficients and technological compatibility with MEMS processes. Non-destructive analysis is ideal for future system integration, as process and quality control can be carried out directly during production. Optical and spectroscopic methods are generally used for this, but these require an established material model, which is not available for new material compositions such as ScAlN, especially as they have to be adapted to different stoichiometries. In this contribution, ScAlN thin films are characterized by non-destructive methods such as EDX, XRD, Spectroscopic Ellipsometry and verified by established methods such as SEM, AFM and GDOES. The dielectric properties are investigated by means of plate capacitor structures using Pt, TiN and Ni as contact materials.
Keywords: Scandium Aluminium Nitride; Spectroscopic Ellipsometry; Energy Dispersive X-Ray Spectroscopy; Micro-Electro-Mechanical System; Non-Destructive Quality Control