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DS: Fachverband Dünne Schichten

DS 20: Poster II

DS 20.26: Poster

Thursday, March 21, 2024, 18:00–20:30, Poster D

Characterization of electrical and structural properties of ultrathin substoichiometric NiO_x films — •Tobias Pollenske, Laurenz Hüffmeier, and Joachim Wollschläger — Inst. of Physics, Univ. Osnabrück, Barbarastr. 7, 49076 Osnabrück, Germany

Ultrathin, substoichiometric NiO_x films offer promising applications in electronics and optoelectronics. The electronic structure of these films, whith transition from conductive (x=0) to insulating (x=1) state, enables targeted control of electrical conductivity and opens up potential for switching elements in electronics and transparent conductive layers in optoelectronics. In addition to transparency in the visible spectral range, the antiferromagnetic nature of nickel oxide (x=1) and ferromagnetism of Ni (x=0) makes these layers interesting for applications in spintronics. The holistic research of these material properties aims to develop a deep understanding and lay the foundation for innovative electronic devices, optoelectronic devices and high-performance sensors.
Hence, in this work, ultrathin NiO_x films with varying stoichiometries (0< x <1) were grown on insulating MgO(001) substrates using reactive molecular beam epitaxy (RMBE). The investigation focused on the temperature-dependent conductivity and charge carrier density of these films. Additionally, the structural characteristics of the films were determined through XRR and (HE)XRD. Complementary insights into the chemical composition of the films for both near surface and bulk, were obtained by Soft XPS and HAXPES measurements, respectively.

Keywords: nickel oxide; conductivity; RMBE; XRD; HAXPES