Berlin 2024 – scientific programme
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DS: Fachverband Dünne Schichten
DS 20: Poster II
DS 20.27: Poster
Thursday, March 21, 2024, 18:00–20:30, Poster D
Freestanding (K,Na)NbO3 thin films grown by metal-organic vapor phase epitaxy — •Jeremy Maltitz, Saud Bin Anooz, Jens Martin, and Jutta Schwarzkopf — Leibniz-Institut für Kristallzüchtung, Berlin, Germany
Pulsed Laser Deposition (PLD) is one of the most suitable deposition techniques used to deposit heterostructures with sacrificial layer to obtain freestanding oxide thin films. However, it suffers from the low oxygen partial pressure and high energetic particle bombardment during film growth, typically leading to oxide films with high structural and compositional defect density which results in inferior functional properties for the oxide film. In contrast, Metal-Organic Vapor Phase Epitaxy (MOVPE) provides films with significantly lower defects density due to growth conditions at higher oxygen partial pressures and nearby thermodynamic equilibrium. Thus, the combination of PLD and MOVPE is a promising approach to realize freestanding complex oxide membranes with high structural quality. Specifically, the ferroelectric material (K,Na)NbO3 is interesting since its properties are crucially determined by the application of strain. Traditionally this is achieved by heteroepitaxial growth of (K,Na)NbO3 thin films on lattice-mismatched substrates. More flexibility however, is given by detaching the (K,Na)NbO3 film from its growth substrate and transfer on a flexible support. However, the growth of (K,Na)NbO3 directly on the sacrificial layer is challenging due to the hygroscopic properties of the Sr3Al2O6 material system, which have to protected by introducing a thin buffer layer on the sacrificial layer.
Keywords: heterostructure; nanomembrane; perovskites; oxides; sacrificial layer