Berlin 2024 – scientific programme
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DS: Fachverband Dünne Schichten
DS 20: Poster II
DS 20.28: Poster
Thursday, March 21, 2024, 18:00–20:30, Poster D
A time-domain perspective on the structural and electronic response in epitaxial ferroelectric thin films — •Matthias Rössle1, Christelle Kwamen1, Wolfram Leitenberger2, Pedro Rojo Romeo3, Bertrand Vilquin3, Catherine Dubourdieu1,4, and Matias Bargheer2,1 — 1Helmholtz-Zentrum Berlin, Berlin, Germany — 2Universität Potsdam, Potsdam, Germany — 3Ecole Centrale de Lyon, Ecully, France — 4Freie Universität Berlin, Berlin, Germany
Using synchrotron-based time-resolved X-ray diffraction and simultaneously measured electrical data, we investigate the frequency-dependent operando response of epitaxially grown Pb(Zr0.48Ti0.52)3 capacitors epitaxially grown on Silicon substrates in the frequency range 2 < ν ≤ 200 kHz. We find that the electrical and structural hysteresis loops deform at high frequencies above 40 kHz, leading to a lower saturation polarization at high frequencies. We explain these observations in a time-domain perspective: The polarization and the structural motion within the unit cell are coupled to the strain along the c-axis by the piezoelectric effect. The solution of this coupled oscillator system is derived experimentally from the simultaneously measured electronic and structural data.
Keywords: ferroelectrics; ferroelectric switching; time-resolved X-ray diffraction; operando experiments