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DS: Fachverband Dünne Schichten
DS 20: Poster II
DS 20.32: Poster
Donnerstag, 21. März 2024, 18:00–20:30, Poster D
Epitaxial stabilization of perovskite ATeO3 thin films — •Andreas Herklotz1, Florina Stefania Rus2, David P Cann3, and Kathrin Dörr1 — 1Institute for Physics, Martin-Luther-University Halle-Wittenberg, Halle, Germany — 2National Institute for Research and Development in Electrochemistry and Condensed Matter, Timisoara, Romania — 3Oregon State University, Corvallis, OR
Tellurium oxides of the form ATeO3 typically do not crystallize in perovskite structures. Here, we show that perovskite-like ATeO3 (A = Ca, Sr, Ba) thin films can be grown on perovskite single-crystal substrates via epitaxial stabilization. The films are stable with high optical bandgaps, low dielectric losses and high electric breakdown strength. Hysteretic dielectric behavior in SrTeO3 and BaTeO3 strongly suggest the presence of antiferroelectricity and ferroelectricity, respectively. These properties make perovskite tellurium oxides a possibly appealing class as thin film coating or insulator material in advanced microelectronics. Tellurium oxides constitute a largely unexplored class of materials that might show new and interesting functionalities in epitaxial thin film form. Our work encourages new work within this field.
Keywords: tellurates; ferroelectrics; antiferroelectrics; dielectrics