Berlin 2024 – scientific programme

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DS: Fachverband Dünne Schichten

DS 20: Poster II

DS 20.5: Poster

Thursday, March 21, 2024, 18:00–20:30, Poster D

Growth and Characterisation of V₂O₅ and VO_x Phase Mixtures for Memristive Device Applications. — •Aisling Hussey, Brian Walls, and Igor Shvets — School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Ireland

Vanadium oxides exhibit a range of oxidation states, from +3 to +5. Many of these states have metal-insulator transitions, which makes them candidate materials for memristive devices and resistive random access memory. V₂O₅ is the highest oxidation state and is a semiconductor with no metal-insulator transition. It can be reduced to form regions of V₆O₁₃ and VO₂. The formation of these phases in a reduced single crystal leads to a reduction in resistance, as a conductive path through these phases is formed. [1] This work aims to investigate whether conducting filaments of these phases will form in V₂O₅ and reduced mixed phase thin films. V₂O₅ and mixed phase VO_x films have been grown using magnetron sputtering. The films have been structurally characterised using XRD and x-ray reflectivity, and electrically characterised by resistance measurements. Electric field driven reduction and formation of conducting filaments will be investigated and characterised using electrical measurements. The films will be structurally characterised following filament formation, to identify phases present in the conducting filament.

[1] Walls, Brian, et al. "VO_x Phase Mixture of Reduced Single Crystalline V₂O₅: VO₂ Resistive Switching." Materials 15.21 (2022): 7652.

Keywords: oxide reduction; vanadium pentoxide; memristor; resistive switching