Berlin 2024 – scientific programme
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DS: Fachverband Dünne Schichten
DS 20: Poster II
DS 20.9: Poster
Thursday, March 21, 2024, 18:00–20:30, Poster D
Floating-base OPBTs for non-volatile memories — •Amric Bonil and Hans Kleeman — TU Dresden, Germany
In an effort to follow the organic electronics trend with its advantages of flexibility, portability, low-power consumption and biocompatibility, new designs for an organic non-volatile memory are being investigated. These devices could make up a path toward in-memory computing applications based on organic transistors.
Organic Permeable Base Transistors (OPBTs) have already demonstrated their excellent performance regarding high current and speed, good On/Off ratios and gain [1]. Here we show that OPBTs with a supplementary floating base can be used as a medium-term memory device. The vertical device architecture with thin, naturally formed, passivated layers of aluminum oxide surrounding both bases allow for a very small program voltage (+3V) with a memory window of 0.7 V. A retention time of up to 105 s can be reached for a very simple fabrication process that could be further enhanced to allow for reversible behavior (erasing).
[1] E. Guo, F. Dollinger, B. Amaya, A. Fischer, H. Kleemann, Adv. Optical. Mater. 9, 2002058 (2021).
Keywords: Memory; Organic Permeable Base Transistor; Aluminum oxide; Vertical organic transistor; Floating base