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DS: Fachverband Dünne Schichten

DS 21: Optical Analysis of Thin Films

DS 21.8: Vortrag

Freitag, 22. März 2024, 11:45–12:00, A 053

Scanning Reflectance Anisotropy Microscopy: Strain Mapping of Metasurfaces and Beyond — •Fabian Haake, Joan Sendra, Henning Galinski, and Ralph Spolenak — ETH Zurich, Zurich, Switzerland

A common failure mode of flexible electronic devices is catastrophic failure or device degradation due to mechanical strain, making accurate strain control a critical aspect in their design and characterization. Here, we introduce scanning reflectance microscopy (SRAM) as a broadband multi-material platform for strain mapping on the microscale. This multi-material optical platform serves not only to access microscopic strain distributions but also shows high phase sensitivity.

This technique provides a practical approach to mechanical characterization, yielding valuable insights into the mechanical behavior of diverse materials, including metamaterials, amorphous and crystalline semiconductors, and metals. The microscope's capability to generate diffraction-limited strain and phase maps enables a thorough analysis of materials properties without causing damage.

The capabilities of the technique are discussed on specific examples, such as strained metals and semiconductors as well as metasurfaces. Special emphasis is laid on the chance to apply this technique for in-situ studies and post-mortem analysis of fractured materials.

[1] J. Sendra, F. Haake, M. Calvo, H. Galinski, and R. Spolenak, Multi-Material Strain Mapping with Scanning Reflectance Anisotropy Microscopy, Adv Funct Materials, p. 2302179, Jun. 2023, doi: 10.1002/adfm.202302179.

Keywords: Reflection anisotropy spectroscopy RAS; Reflection difference spectroscopy RDS; Scanning reflection anisotropy spectroscopy SRAM; Strain mapping; Phase sensitive