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DS: Fachverband Dünne Schichten
DS 6: Thin Film Properties I
DS 6.4: Talk
Tuesday, March 19, 2024, 10:45–11:00, A 060
Controllable in-situ growth of nanostructured graphene on cubic-SiC/Si(001) wafers — •Victor Aristov1,2, Olga Molodtsova1, Sergey Babenkov1,3, Dmitrii Potorochin1,4, Dmitry Marchenko5, Andrea Locatelli6, Tevfik Onur Mentes6, Alessandro Sala6, and Alexander Chaika7 — 1Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany — 2Institut fuer Theoretische Physik, Universitaet Hamburg, 22607 Hamburg, Germany — 3CEA-Saclay, 91190 Gif-sur-Yvette, France — 4TU Bergakademie Freiberg, D-09599 Freiberg, Germany — 5HZB für Materialien und Energie, D-12489 Berlin, Germany — 6ElettraSincrotrone Trieste, I-34149 Basovizza, Trieste, Italy — 7CRANN, School of Physics, Trinity College Dublin, Dublin 2, Ireland
The graphene grown on low-cost cubic-SiC/Si(001) wafers usually contains nanometer-sized domains with a few different lattice orientations. Here we present the in-situ investigation of layer-by-layer graphene growth on such wafers. The measurements were performed using several methods: scanning tunneling microscopy with atomic resolution, low-energy electron microscopy (LEEM), high-resolution laterally-resolved X-ray photoelectron spectroscopy (micro-XPS), angle-resolved photoelectron spectroscopy (micro-ARPES), and micro low-energy electron diffraction (micro-LEED). The experimental data evidence the opportunity to control the local thickness of the graphene overlayer on the silicon carbide substrate in situ during UHV synthesis.
Keywords: graphene; layer-by-layer growth; cubic-SiC/Si(001); LEEM; LEED