Berlin 2024 – wissenschaftliches Programm

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DY: Fachverband Dynamik und Statistische Physik

DY 8: Artificial Intelligence in Condensed Matter Physics II (joint session TT/DY)

DY 8.2: Vortrag

Montag, 18. März 2024, 15:15–15:30, H 3025

Transverse barrier and filament formation by electrical triggering of a metal-to-insulator or insulator-to-metal transition — •Lorenzo Fratino¹, Marcelo Rozenberg², Pavel Salev³, Javier Del Valle⁴, and Ivan K. Schuller⁵ — ¹LPTM, CY Cergy Paris Université, Cergy-Pontoise — ²LPS, Université Paris Saclay, Orsay — ³University of Denver, USA — ⁴University of Geneva, Switzerland — ⁵University of California, San Diego, USA

By doing numerical simulations on Mott resistors network model, we were able to give a theoretical background to experimental observations on magnetotransport in ferromagnetic oxide (La,Sr)MnO₃ (LSMO) during electrical triggering of the intrinsic metal-insulator transition (MIT), which produces volatile resistive switching. This switching occurs in a characteristic spatial pattern, the formation of a paramagnetic insulating barrier perpendicular to the current flow, in contrast to the conventional filamentary percolation parallel to the current. This formation was also simulated in order to demonstrate that this process is triggered by nucleation at hotspots, with a subsequent expansion over several decades in time. By comparing three case studies (VO₂, V₃O₅, and V₂O₃), we identified the resistivity change across the transition as the crucial parameter governing this process. Our results provide a spatio-temporal characterisation of volatile resistive switching in Mott insulators, which is important for emerging technologies, such as optoelectronics and neuromorphic computing.

[1] Phys. Rev. B 108 (2023) 174434.

[2] Nat. Comm. 12 (2021) 1.

[3] Science 373 (2021) 907.

Keywords: Mott materials; Resistive switching; neuromorphic computing; spatiotemporal characterisation; optoelectronics