Berlin 2024 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 1: Nitrides: Preparation and characterization I
HL 1.2: Vortrag
Montag, 18. März 2024, 09:45–10:00, EW 015
Optical properties of cubic InxGa1−xN thin films — •Jonas Rose1, Elias Baron1, Rüdiger Goldhahn1, Mario Zscherp2, Silas A. Jentsch2, Sangam Chatterjee2, Jörg Schörmann2, and Martin Feneberg1 — 1Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Germany — 2I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Germany
Cubic InGaN (c-InGaN) is a promising material for fabricating highly efficient optoelectronical devices and can potentially replace its hexagonal counterpart for certain applications. Due to the lack of internal polarization fields and lower band gap energies c-InGaN is a suitable candidate for applications in the visible spectrum. Especially InGaN/GaN
quantum wells can be used for green light-emitting devices. Therefore, the knowledge of its optical properties is of special interest. In this context, spectroscopic ellipsometry is a sophisticated experimental technique due to its high sensitivity as well as contact- and destruction-free operation. Recently, several breakthroughs in crystal growth regarding structural quality and range of In-content have been achieved.
We present our investigation of c-InGaN thin films deposited by plasma-assisted molecular beam epitaxy (MBE) on 3C-SiC/Si substrates in (001) orientation. Spectroscopic ellipsometry measurements in the IR and VIS-UV spectral range yield the dielectric function containing phonon and plasmon contributions as well as interband transitions. Additionally, many-body effects affecting the absorption edge are taken into account.
Keywords: Ellipsometry; InGaN; Band gap bowing; Dielectric function; Many-body effects