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HL: Fachverband Halbleiterphysik

HL 10: Focus Session: Evolution of Topological Materials into Superconducting Nanodevices I (joint session HL/TT)

HL 10.9: Talk

Monday, March 18, 2024, 17:15–17:30, EW 202

Selective growth of magnetic topological insulator nanostructures via molecular beam epitaxy — •Max Vaßen-Carl, Peter Schüffelgen, and Detlev Grützmacher — Peter Grünberg Institute, Forschungszentrum Jülich, Jülich, Germany

Magnetic topological insulators (MTIs) have great potential for hosting Majorana zero modes [1]. To achieve this, MTI nanostructures are a promising candidate. In such devices, the chiral edge modes (CEM) of the MTI are predicted to hybridise [2]. To verify this prediction, other groups have etched MTI films into thin Hallbars [3]. This etching process is prone to damage the edge states.
In this work a new molecular beam epitaxy (MBE) technique is presented, which enables the selective growth of MTI structures for the first time. Transport measurements on such devices provide insights into the size dependence of CEM in MTIs.

[1] D. Burke et al., arXiv 2302.10982 (2023)

[2] Chen et al., Phys. Rev. B 97, 104504 (2018)

[3] Zhou et al., Phys. Rev. Lett. 130, 086201 (2023)

Keywords: Magnetic topological insulator; Nanostructures