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HL: Fachverband Halbleiterphysik
HL 11: Materials and Devices for Quantum Technology I (joint session HL/QI)
HL 11.2: Vortrag
Montag, 18. März 2024, 15:15–15:30, EW 203
A type-IV gatemon qubit based on Ge/Si core-shell nanowires — Han Zheng1, Luk Yi Cheung1, Nikunj Sangwan1, Roy Haller1, Carlo Ciaccia1, Artem Kononov1, Erik P. A. M. Bakkers2, Joost Ridderbos3, Andreas Baumgarner1,4, and •Christian Schönenberger1,4 — 1Dep. Physics, Univ. of Basel, Basel, Switzerland — 2Dep. of Appl. Phys., Eindhoven Univ. of Technology, Eindhoven, The Netherlands — 3MESA+ Inst. of Nanotechnology, Univ. of Twente, Enschede, The Netherlands — 4Swiss Nanoscience Institute, Univ. of Basel, Basel, Switzerland
Transmon qubits are currently the most popular solid-state platform for small and intermediate scale quantum technology applications. However, there are several challenges, such as the large size and hence the difficulty in scaling to many qubits, the sensitivity to flux noise and the associated power load for driving qubits through flux lines.
A possible solution are semiconductor-superconductor hybrid systems called gatemon qubits where the Josephson junction is realized by a gate-tunable weak link. Such gatemons have intensively been studied in III-V semiconductor 2D and 1D platforms. But only recently work has been started on using type-IV semiconductors to realize gatemons. Here, we present a gatemon qubit based on a Ge/Si core-shell nanowire Josephson junction. On this new platform we demonstrate the electrical tunability and coherent manipulation, with coherence times on par with other gatemon platforms. We also demonstrate that these junctions are highly transmissive opening a way to realize parity protected 4e gatemon devices.
Keywords: Ge-Si; gatemon; nanowire; qubit; Josephson junction