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HL: Fachverband Halbleiterphysik

HL 11: Materials and Devices for Quantum Technology I (joint session HL/QI)

HL 11.7: Hauptvortrag

Montag, 18. März 2024, 16:45–17:15, EW 203

Strategic wafer-scale creation of telecom single-photon emitters in silicon for large-scale quantum photonic integrated circuits — •Yonder Berencen — Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328, Dresden, Germany

Indistinguishable single-photon sources at telecom wavelengths are crucial for transmitting quantum information over long distances with minimal losses, facilitating secure quantum communication and a modular approach to quantum computing. Monolithic integration of these sources with reconfigurable photonic elements and single-photon detectors in a silicon chip is vital for scalable quantum hardware, such as quantum photonic integrated circuits (QPICs). While many necessary components for QPICs are available, the lack of on-chip single-photon emitters in silicon has hindered practical implementation on the nanoscale. This study presents two wafer-scale protocols, demonstrating quasi-deterministic creation of single G and W telecom-wavelength color centers in silicon with over 50% probability. Both protocols are compatible with current silicon technology, enabling fabrication of single telecom quantum emitters at desired nanoscale positions on a silicon chip. These results offer a clear pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm, overcoming a critical obstacle in the development of scalable quantum photonic hardware.

Keywords: Single-photon sources; Telecom wavelengths; Quantum Photonics; Silicon chip integration; Color centers in silicon