Berlin 2024 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 11: Materials and Devices for Quantum Technology I (joint session HL/QI)
HL 11.8: Vortrag
Montag, 18. März 2024, 17:15–17:30, EW 203
Color centers in hexagonal boron nitride for quantum memories. — •Chanaprom Cholsuk1, Asli Cakan2, Sujin Suwanna3, and Tobias Vogl1,2 — 1Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany — 2Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany — 3Optical and Quantum Physics Laboratory, Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400, Thailand
A quantum memory is essential for large-scale quantum networks. While several quantum memories have been developed so far, many cases remain unable to meet all requirements entirely i.e. long storage time, selective compatibility, and high memory efficiency. This work therefore proposes a quantum memory from color centers in hexagonal boron nitride in a cavity based on the Raman scheme with Lambda-type (Λ) energy levels. 257 triplet and 211 singlet spin electronic transitions have been characterized by density functional theory and classified with quantum applications. The result suggests that some defects inherit the Λ electronic structures under neutral charge, whereas some require charge-state manipulation. Further, the required quality factor and bandwidth provide a reasonable range for achieving a 95% writing efficiency. Consequently, this work contributes to realizing hBN as a quantum memory for future quantum networks.
Keywords: quantum memory; hexagonal boron nitride; density functional theory; quantum technology applications; fluorescent defects