Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 12: Semiconductor Lasers I

HL 12.1: Vortrag

Montag, 18. März 2024, 15:00–15:15, EW 561

Multi-Hole-Aperture VCSELs to remove the saturation current barrier — •Sicong Tian^1,2, Mansoor Ahamed^1,3, Georgiy Sapunov¹, and Dieter Bimberg^1,2 — ¹Bimberg Chinese-German Center for Green Photonics, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, Changchun 130033, PR China — ²Center of Nanophotonics, Institute of Solid State Physics, Technische Universität Berlin, Berlin D-10632, Federal Republic of Germany — ³The University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China

Novel design of Vertical-Cavity Surface-Emitting Lasers is presented leading to a strong reduction of thermally induced band gap shift as a function of current. The aperture is realized through dry etching geometrically variable arrangements of deep holes and subsequent oxidation. The blind holes are then filled with gold resulting in an effective heat drain technology. The shape and size of the aperture depend on the arrangement of holes [1]. Larger output power, rollover current, single-mode emission, and reduced series resistance are demonstrated. In addition, pseudo-single-mode multi-aperture VCSELs are enabled [2]. References [1] G. Larisch, S.C. Tian, and D. Bimberg, Radiation Emitter, EP2020192355. [2] G. Larisch, S.C. Tian, and D. Bimberg, Radiation Emitter, EP2021168265.

Keywords: Vertical-Cavity Surface-Emitting Lasers; thermal roll-over; high speed; single mode; large power