Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 12: Semiconductor Lasers I

HL 12.3: Vortrag

Montag, 18. März 2024, 15:30–15:45, EW 561

Growth, fabrication, and characterization of site-controlled quantum dots microcavity arrays based on buried-stressor approach — •Kartik Gaur, Sam Baraz, Lukas Dworaczek, Sarthak Tripathi, Imad Limame, Ching-Wen Shih, Martin Podhorsky, Aris Koulas-Simos, Sven Rodt, and Stephan Reitzenstein — Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin

The buried-stressor approach is one of the pivotal methods for the growth of site-controlled quantum dots (SCQDs). This growth technique makes use of the strain from a partially oxidized AlAs layer to induce site-selective nucleation of InGaAs quantum dots. Here, we report on the growth, fabrication, and characterizations of SCQD microcavity arrays consisting of spectrally homogeneous single photon sources. Various optimizations in the growth process are explored through simulations, with subsequent samples grown using metal-organic chemical vapor deposition (MOCVD) to achieve position, number, and emission energy-controlled QDs. A systematic investigation of the effects of variation of SCQD growth parameters on QDs density, surface morphology, and optical properties is done using atomic force microscopy (AFM), cathodoluminescence (CL), and microphotoluminescence (µPL) spectroscopy. Furthermore, quantum optical characterizations such as second-order autocorrelation, visibility measurements, etc. are also performed on these SCQD arrays. The comprehensive understanding of the intricacies involved in the growth and characterization of SCQDs offers a roadmap for advancing quantum information technology.

Keywords: quantum dots; epitaxy; single photon sources; site-controlled quantum dots