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HL: Fachverband Halbleiterphysik

HL 12: Semiconductor Lasers I

HL 12.4: Vortrag

Montag, 18. März 2024, 15:45–16:00, EW 561

Investigation of different QW arrangements in the deep red laser emission range for VECSELs in a V-shaped resonator — •Rebecca Rühle, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

In this work we investigate the influence of the quantum well (QW) distribution of a VECSEL (Vertical external-cavity surface emitting laser) on its optical output power. One parameter is the layer thickness, since a thicker laser structure is associated with higher temperatures in the active region. In order to vary the thickness, three different QW distributions are examined. The VECSEL chip consists of a Al(0.3)GaAs/Al(0.95)GaAs DBR and an active region with InGaAsP QWs, grown with a MOVPE (metal-organic vapor-phase epitaxy). For the investigated VECSELs, the total number of QWs is kept approximately at the same to optain a better comparability. The exact structure of the investigated VECSELs consists of 11x1, 6x2 and 4x3 InGaAsP QWs embedded in a GaInP barrier for laser emission at 770nm. Power measurements were used to investigate and analyze the performance of the v-shaped resonator and VECSEL structures.

Keywords: VECSEL; semiconductor disk laser; deep red emission