Berlin 2024 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 12: Semiconductor Lasers I
HL 12.6: Talk
Monday, March 18, 2024, 16:15–16:30, EW 561
Polarized-resolved Raman scattering of epitaxially grown (Si)GeSn layers — •Agnieszka Corley-Wiciak1, Shunda Chen2, Omar Concepción3, Marvin H. Zoellner1, Detlev Grützmacher3, Dan Buca3, Tianshu Li2, Giovanni Capellini1,4, and Davide Spirito1 — 1IHP Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany — 2Department of Civil and Environmental Engineering, George Washington University, Washington USA — 3Peter Grünberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Juelich, Germany — 4Dipartimento di Scienze, Università Roma Tre, Roma,
Silicon-Germanium-tin (SiGeSn) alloys are gaining popularity due to their potential applications in photonics, optoelectronics, microelectronics, and thermoelectrics. To accomplish this, it is critical to accurately assess the effect of composition, strain, and deposition method on the crystal quality. Raman spectroscopy as an experimental tool for probing vibrational modes allows a detailed study of these qualitites. Here we investigate the role of Sn incorporation on the vibrational properties of (Si)GeSn epitaxial layers using polarized Raman spectroscopy and numerical simulations. The nature of the disordered-assisted spectral feature can be ascertained through a comparative analysis. It comprises two modes: one associated with the vibration of Ge atoms that Sn neighbors do not impact, and the disorder activating specific mode. This provides a framework for understanding the vibrational properties in SiGeSn alloys, particularly concerning the impact of the local ordering of different atomic species.
Keywords: SiGeSn; Raman; short-range ordering; group IV; GeSn