HL 12: Semiconductor Lasers I
Montag, 18. März 2024, 15:00–16:45, EW 561
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15:00 |
HL 12.1 |
Multi-Hole-Aperture VCSELs to remove the saturation current barrier — •Sicong Tian, Mansoor Ahamed, Georgiy Sapunov, and Dieter Bimberg
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15:15 |
HL 12.2 |
Tuning nanowire lasers via hybridization with tailored dye molecules — •Edwin Eobaldt, Leon Kroß, Jakob Wurschi, Aurelia Eberhard, Marco Grünewald, Daniel Costabel, Kalina Peneva, and Carsten Ronning
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15:30 |
HL 12.3 |
Growth, fabrication, and characterization of site-controlled quantum dots microcavity arrays based on buried-stressor approach — •Kartik Gaur, Sam Baraz, Lukas Dworaczek, Sarthak Tripathi, Imad Limame, Ching-Wen Shih, Martin Podhorsky, Aris Koulas-Simos, Sven Rodt, and Stephan Reitzenstein
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15:45 |
HL 12.4 |
Investigation of different QW arrangements in the deep red laser emission range for VECSELs in a V-shaped resonator — •Rebecca Rühle, Michael Jetter, and Peter Michler
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16:00 |
HL 12.5 |
265 nm AlGaN based laser heterostructures using distributed polarization doping — •Lennard Zinsilowski, Massimo Grigoletto, Jakob Höpfner, Giulia Cardinali, Luca Sulmoni, Tim Wernicke, and Michael Kneissl
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16:15 |
HL 12.6 |
Polarized-resolved Raman scattering of epitaxially grown (Si)GeSn layers — •Agnieszka Corley-Wiciak, Shunda Chen, Omar Concepción, Marvin H. Zoellner, Detlev Grützmacher, Dan Buca, Tianshu Li, Giovanni Capellini, and Davide Spirito
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16:30 |
HL 12.7 |
Free space emission spectra and bandwidths of vertical cavity surface emitting lasers — •Pouria Emtenani, Nasibeh Haghighi, Martin Zorn, Markus R Wagner, and James A Lott
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