Berlin 2024 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 13: Poster I
HL 13.22: Poster
Montag, 18. März 2024, 15:00–18:00, Poster E
Shear-coated highly-smooth ion gels as dielectrics in ion-gated organic field effect transistors — Jonathan Perez Andrade1,2, Angelika Wrzesińska-Lashkova1,2, Anupam Prasoon1,3, Felix Talnack1, •Yulia Krupskaya2, Xinliang Feng1,3, Yana Vaynzof1,2, Mike Hambsch1, Bernd Büchner1,2, and Stefan C. B. Mannsfeld1 — 1Dresden University of Technology, Germany — 2Leibniz Institute for Solid State and Materials Research Dresden, Germany — 3Max Planck Institute for Microstructure Physics, Halle (Saale), Germany
We have developed a straightforward method to produce ion gels with surface roughness at the nanometer scale using a shear-coating process and employed these gels as ultra-smooth dielectric substrates in organic field effect transistors (OFET). The exceptional smoothness of the gels allowed us to grow polycrystalline films of C8-BTBT (2,7-Dioctyl[1]benzothieno[3,2-b][1]benzothiophen) and C10-DNTT (2,9-Didecyldinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene) and to evaporate metal contacts on their surface. Besides that, the shear-coating process increased the ion concentration at the gel’s surface leading to a remarkably high capacitance up to 10.1 µF/cm2. The obtained ion-gel-based OFET showed very good characteristics with low hysteresis and maximum charge carrier mobility of 0.54 cm2/V/s and 0.27 cm2/V/s for C10-DNTT and C8-BTBT devices, respectively. These results demonstrate the significant potential of using shear-coated ion gels in fabrication of high quality OFET.
Keywords: ion gels; ionic gating; organic field effect transistors