Berlin 2024 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 13: Poster I

HL 13.28: Poster

Monday, March 18, 2024, 15:00–18:00, Poster E

Screening of different p-type materials for pn-heterojunctions on α-Ga₂O₃
— •Paul Bokemeyer, Sofie Vogt, Clemens Petersen, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut, Germany

With a wide band gap of about 5.3 eV [1], the possibility for adjusting the band gap energy by alloying with isostructural aluminum oxide or indium oxide [1], and a high expected breakdown field of up to 10 MV/cm [2], the corundum α-phase of Ga₂O₃ is highly interesting for high power applications. Schottky barrier diodes have been shown to exhibit high rectification ratios [3] and the first isostructural pn-diodes using α-Ir₂O₃ as p-type material have been demonstrated [4]. We evaluate the electrical properties of various heterojunction diodes on α-Ga₂O₃:Sn grown by pulsed laser deposition (PLD). Room temperature deposited ZCO (PLD), NiO (PLD) and CuI (sputtering) were used as p⁺-type materials. Thereby NiO as well as CuI enable the fabrication of fully transparent devices in the visible spectral range. High current rectification ratios of 6.3 (ZCO), 3.9 (NiO), and 4.6 (CuI) orders of magnitude at ± 3V were achieved.

^[1] A. Hassa et al., J. Phys. D: Appl. Phys. 54 223001 (2021)
^[2] M. Biswas and H. Nishinaka; APL Materials 10, 060701 (2022)
^[3] S. Köpp et al., J. Vac. Sci. Technol. A 41, 043411 (2023)
^[4] S. Kan et al.; Appl. Phys. Lett. 113, 212104 (2018)

Keywords: Gallium oxide; pn heterojunctions