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HL: Fachverband Halbleiterphysik
HL 13: Poster I
HL 13.30: Poster
Montag, 18. März 2024, 15:00–18:00, Poster E
PLD Deposition of the transistion metal sesquioxides α-Ti2O3 and α-Cr2O3 — •Lorenz Köhnlein, Sofie Vogt, Clemens Petersen, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut, Deutschland
Corundum phase sesquioxides like Ti2O3 and Cr2O3 are ideally suited for band gap engineering within α-Ga2O3-based ternary alloys to design wavelength-selective optoelectronic devices. It has been shown that rhombohedral Ti2O3 has a narrow-bandgap of ≈ 0.1 eV [1]. Therefore, Ti could be used as a band gap modifier for α-Ga2O3 to tune the bandgap between 0.1 eV and 5.3 eV [2].
We present physical properties of PLD-grown Ti2O3 and Cr2O3 thin films, deposited on m-, a- and c-plane Al2O3 substrates as well as on α-Ga2O3 buffer layers at various growth temperatures, atmospheres and pressures. Hall-effect and XRD measurements were used to investigate the electrical and crystalline properties. A strong dependence of the crystal phase formation on the background gas and pressure was observed. Argon atmosphere faciliated the growth of Ti2O3, whereas oxidisation to TiO2 occured during the deposition in oxygen atmospheres even at low pressures.
Keywords: Ti2O3; Transition metal sesquioxide; Cr2O3; XRD