Berlin 2024 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 13: Poster I
HL 13.4: Poster
Monday, March 18, 2024, 15:00–18:00, Poster E
On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands — Mohd Saif Shaikh1,2, Shuyu Wen1,3, Mircea-Traian Catuneanu2, Mao Wang4, Artur Erbe1,2, Slawomir Prucnal1, Lars Rebohle1, •Shengqiang Zhou1, Kambiz Jamshidi2, Manfred Helm1,2, and Yonder Berencén1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — 2Dresden University of Technology, 01062 Dresden, Germany — 3Institute of Semiconductors, Chinese Academy of Sciences, Bejing, China — 4Sichuan Normal University, Chengdu 610101, China
Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology.
Keywords: Silicon; Ion implantation; Infrared photodetector