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HL: Fachverband Halbleiterphysik
HL 13: Poster I
HL 13.51: Poster
Montag, 18. März 2024, 15:00–18:00, Poster E
Heterostructure diodes based on reactively co-sputtered AgxCu1−xI thin films — •Jorrit Marius Bredow, Sofie Vogt, Christiane Dethloff, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix Bloch Institute for Solid State Physics, Germany
A wide band gap of 3 eV at room temperature and its intrinsic p-type conductivity[1] render copper iodide (CuI) a promising candidate for the fabrication of transparent heterostructure diodes. However, the often degenerate hole concentration of up to 1020 cm−3[1] of binary CuI impedes the realization of rectifying heterostructures where the depletion layer is located in the CuI. By alloying CuI with Ag, a reduction of conductivity and carrier density was demonstrated for an increasing silver fraction x[2]. Additionally, a switch from p- to n-type conductivity was reported, which enables the fabrication of heterostructure pn-diodes based on silver copper iodide (AgxCu1−xI)[3].
We present transparent heterostructure diodes based on the ternary alloy AgxCu1−xI on different n-type back contact layers. AgxCu1−xI is deposited by means of reactive co-sputtering of metallic Cu and Ag in an argon and iodide atmosphere. The influence of the back contact layers on the functionality and the rectifying behaviour of the pn-junctions is compared and presented.
[1] C. Yang et al., PNAS, 113, 12929-12933, 2016.
[2] A. Annadi et al., Appl. Mater. Today, 20, 100703, 2020.
[3] J.-H. Cha and D.-Y. Jung, ACS Appl. Mater. Interfaces, 9, 43807-43813, 2017.
Keywords: Copper Iodide; CuI; Diode; Heterostructure; sputter deposition