Berlin 2024 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 13: Poster I
HL 13.55: Poster
Montag, 18. März 2024, 15:00–18:00, Poster E
Characterization of Arsenic- and Antimony-Containing Layers Grown in a Source-Material Transformed MBE — •Peter Zajac1, Sascha R. Valentin2, Timo A. Kurschat1,2, Rainer Krage2, Arne Ludwig1, and Andreas D. Wieck1 — 1Lehrstuhl für Angewandte Festkörperpysik, Ruhr-Universität Bochum, 44801 Bochum, Germany — 2Gesellschaft für Gerätebau mbH, Klönnestr. 99, 44143 Dortmund, Germany
The results of the growth of arsenic- and antimony-containing layers are presented. These layers were grown in a MBE system which underwent a transformation from II-VI (HgCdTe) to III-V (AlGaIn-AsSb) materials growth.
RHEED is utilized to determine surface reconstructions and growth rates in situ. Post-growth atomic force microscopy is employed to study the surface properties, such as roughness, step density and terrace width of the grown layers. With photoluminescence spectroscopy mapping of quantum well samples the radiative recombination yield on a whole wafer is compared between different samples. As a measure of epitaxial layer quality Hall-effect measurements on high electron mobility structures are performed.
These works represent the early steps after the commissioning of a used MBE system towards the growth of mid-IR emitters.
Keywords: epitaxy; MBE; RHEED; AFM; photoluminescence