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Berlin 2024 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 13: Poster I

HL 13.56: Poster

Montag, 18. März 2024, 15:00–18:00, Poster E

Photoemission study and band alignment of GaN passivation layers on GaInP(100) heterointerfaces — •Sahar Shekarabi1, Mohammad Amin Zare Pour1, Haoqing Su2, Wentao Zhang2, Chengxing He2, Oleksandr Romanyuk3, Agnieszka Paszuk1, Shu Hu2, and Thomas Hannappel11Grundlagen von Energiematerialien, Institut fur Physik, Technische Universit at Ilmenau, 98693 Ilmenau, Germany — 2Department of Chemical and Environmental Engineering, Yale University, New Haven, CT 06520, USA — 3FZU Institute of Physics of the Czech Academy of Sciences, Cukrovarnicka 10, Prague 16200, Czech Republic

GaInP(100) is commonly used as a top photoabsorber in tandem devices and photoelectrochemical (PEC) cells. Since the photo corrosion degrades the cell stability and efficiency, GaN is used as a promising passivation layer. Therefore, studying the band alignment at this heterointerface is crucial for efficient charge transfer and minimizing photovoltage losses. Here, we study the band alignment of the multi-junction heterostructure by X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. GaInP(100) layers were grown by metalorganic chemical vapor deposition on top of GaAs(100), with a P-rich surface reconstruction. GaN passivation layers were grown by atomic layer deposition on oxidized GaInP(100) surfaces. On the P-rich n-GaInP(100) we found upward surface BB of 0.44 eV. Oxidation partly passivates surface states, lowering BB to 0.16 eV. Between the GaInP(100) and GaN passivation layer, we found a VBO of 1.9 eV, suggesting efficient electron transport but impeding hole transport.

Keywords: GaInP(100); GaN; band alignment; MOCVD; X-ray photoelectron spectroscopy

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