Berlin 2024 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 14: Poster II
HL 14.11: Poster
Monday, March 18, 2024, 15:00–18:00, Poster F
Hybrid combination of InGaAs-QDs and Si-based photonic integrated circuits for telecom wavelengths — •Elias Herzog1, Ulrich Pfister1, Daniel Wendland2, Ponraj Vijayan1, Lena Engel1, Peter Gierß1, Erik Jung3, Michael Jetter1, Simone L. Portalupi1, Wolfram Pernice2,3, and Peter Michler1 — 1Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, Germany — 2Physikalisches Institut AG Pernice, University of Münster, Heisenbergstraße 11, Germany — 3Kirchhoff-Institut für Festkörperforschung, University of Heidelberg, Im Neuenheimer Feld 227, Germany
Silicon based materials are widely used for photonic integrated circuits (PICs), because of their low losses in the telecom wavelength regime and available manufacturing expertise. These properties makes them suitable for potential large scale PICs for on-chip quantum technologies. On demand single-photon sources are hard to realize in these systems, due to the indirect bandgap of silicon. On the other hand, InGaAs Quantum Dots (QDs) can emit high quality single photons at telecom wavelengths making it desirable to combine both material platforms. Here we discuss our first steps in combining the benefits of III-V QDs and SiN photonic chips.
Keywords: quantum dots; photonic integrated circuits