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HL: Fachverband Halbleiterphysik
HL 14: Poster II
HL 14.17: Poster
Montag, 18. März 2024, 15:00–18:00, Poster F
Deterministically fabricated InAs/InP quantum dot-based single-photon sources at telecom wavelengths — •Monica Pengerla1, Yury Berdnikov2,3, Pawel Holewa2,3, Alexander Kosarev1, Sven Rodt1, Elizaveta Semenova2,3, and Stephan Reitzenstein1 — 1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin, Germany — 2DTU Electro, Technical University of Denmark, Kongens Lyngby, Denmark — 3NanoPhoton-Center for Nanophotonics, Technical University of Denmark, Kongens Lyngby, Denmark
Quantum dot (QD) based single-photon sources are key elements of photonic quantum networks. In huge demand are sources emitting at telecom wavelengths, especially in the C-band at 1.55 μm, which enables long-distance fiber-based quantum communication. Here, we report the development of single-photon sources based on InAs/InP QDs in circular Bragg grating photonic cavities with back-side Al mirror and bonded to the Si substrate. Numerical simulations of such quantum devices reveal a noticeable rise of photon extraction efficiency beyond 80% for NA = 0.65, as well as Purcell enhancement of the QD transition rate. The devices are deterministically fabricated using a state-of-the-art electron beam lithography system with integrated cathodoluminescence (CL) at 20 K, allowing us to perform in situ electron beam lithography with a high spectral and spatial resolution. Micro-photoluminescence studies reveal cavity-enhanced emission and excellent quantum optical properties from the deterministically fabricated quantum devices.
Keywords: Quantum dot; electron beam lithography; circular Bragg grating