Berlin 2024 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 14: Poster II

HL 14.19: Poster

Monday, March 18, 2024, 15:00–18:00, Poster F

Investigation of the correlation of optical and electronic properties of O-band quantum dots — •Danial Kohminaei, Nikolai Spitzer, Andreas D. Wieck, and Arne Ludwig — Ruhr-Universität Bochum; Lehrstuhl für angewandte Festkörperphysik, Bochum, Deutschland

For future applications in telecommunications and information technology, quantum dots (QDs) are promising candidates as single photon sources. Optical signals are transmitted over long distances through optical fibers, within which the light is attenuated by Rayleigh scattering and by infrared absorption. However, at the so-called Telecom O-band at 1310nm there is a local minimum of absorption.

We grow self-assembled InAs QDs in InGaAs quantum wells via molecular beam epitaxy; understanding the correlation between growth parameters and the resulting structure defining the optical and electronic properties of the QDs is topic of cutting-edge research.

Therefore, the distribution and properties of QDs on a sample with a pattern defining layer (PDL) [1] underneath the QDs and a InGaAs strain reduction layer above are measured by photoluminescence (PL) and capacitance-voltage C(V) spectroscopy mapping.

[1] BART, N. et al.: Wafer-scale epitaxial modulation of quantum dot density, Nature Communications 13 (2022)

Keywords: O-band quantum dots; MBE; Photoluminescence spectroscopy; Capacitance-Voltage spectroscopy; Pattern Defining Layer