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HL: Fachverband Halbleiterphysik

HL 14: Poster II

HL 14.22: Poster

Montag, 18. März 2024, 15:00–18:00, Poster F

Telecom wavelength InP based quantum dots: Growth and optical characterization — •Ranbir Kaur, Mohanad Alkaales, Johann Peter Reithmaier, and Mohamed Benyoucef — Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Germany

Due to their atomic-like properties such as a size-dependent bandgap and strong quantum confinement, semiconductor quantum dots (QDs) emitting at the telecom wavelengths are promising candidates for quantum communication. InP-based QD material system is one of the possible candidates to achieve this spectral region due to the low lattice mismatch (3.2%) between InP and InAs. [1, 2].

Here, we report molecular beam epitaxy growth optimization of InAs/InP QDs emitting at telecom wavelengths for quantum communication applications. Photoluminescence (PL) and Atomic force microscopy (AFM) were used to study the effects of growth parameters on optical and morphological properties. QDs were grown on high-quality distributed Bragg reflectors (DBRs) with 99% reflectivity and lattice-matched lattices to enhance extraction efficiency. Micro-PL measurements at low temperatures reveal bright single QD emission around 1.55 micrometer with narrow linewidths and small fine-structure splittings. Moreover, we report on the growth and optical analysis of C-band QD molecules.

[1] Benyoucef et al., Appl. Phys. Lett. 103 162101 (2013)

[2] Kors et al., Appl. Phys. Lett. 112, 172102 (2018)

Keywords: Quantum dots; Telecom wavelength; Molecular beam epitaxy