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HL: Fachverband Halbleiterphysik

HL 14: Poster II

HL 14.24: Poster

Montag, 18. März 2024, 15:00–18:00, Poster F

Current Induced Magnetization Switching in Vanadium doped (Bi_xSb_1−x)₂Te₃ — •Boris Stanchev, Daniel Rosenbach, Gertjan Lippertz, Anjana Uday, Alexey Taskin, Yoichi Ando, and Erwann Bocquillon — Universität zu Köln, II. Physikalisches Institut, Zülpicher Str. 77, Cologne, Germany

Thin-film quantum anomalous Hall (QAH) insulators host chiral one dimensional edge states when magnetized at mK scale temperatures. The chirality of these edge states corresponds with the direction of the magnetization. Recent experiments have shown that the chirality of edge states and magnetization direction in QAH insulators can also be switched by applying a large current beyond the breakdown threshold at which the QAH effect degrades. However, the precise mechanisms and conditions that lead to this current switching have yet to be elucidated. Thus we present progress towards further studies where we also replicate this effect in Vanadium doped (Bi_xSb_1−x)₂Te₃. Possible applications include the study of ferromagnetic domain walls in QAH insulators, and in particular the coupling of co-propagating edge channels.

Keywords: Quantum Anomalous Hall Effect; Quantum Transport; Topological Insulators; Quantum Electronics; Ferromagnetism