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HL: Fachverband Halbleiterphysik
HL 14: Poster II
HL 14.2: Poster
Montag, 18. März 2024, 15:00–18:00, Poster F
Examination of charge carrier dynamics and their influence on mechanical curvature in a highly strained bent single AlxIn1-xAs/GaAs core shell nanowires as function of diameter via optical laser excitation and X-ray probe method — •Taseer Anjum1, Francisca Marín Largo2, Philipp Jordt3, Ali Al Hassan5, Rajendra Prasad Giri3, Lukas Petersdorf3, Vahid Salehi1, Matthias Rössele4, Bridget Murphy3, Oliver Brandt2, Lutz Geelhaar2, and Ullrich Pietsch1 — 1Universität Siegen, Siegen, Germany — 2Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin, Germany — 3Institute of Experimental and Applied Physics, Kiel, Germany — 4Helmholtz-Zentrum Berlin für Materialien und Energie, BESSY II, Berlin, Germany — 5Karlsruhe Institute of Technology, Karlsruhe, Germany
Extreme bending of semiconductor nanowires (NWs) through asymmetric shell deposition, creates strain gradients that impact their electronic properties. This deformation induces a gradient in the electronic band gap, fostering the formation of an intrinsic quasi-electric field. The study delves into understanding spatially complex electric fields via time-resolved nano x-ray diffraction experiments, tracking elastic deformation in bent NWs. Observation of the GaAs NW 111 Bragg peak evolution reveals plastic deformation due to excess photoexcited charge carriers, mitigated by laser fluence adjustment. This exploration leads to the direct observation of eigenmodes associated with piezo-flexoelectric field screening in bent NWs.
Keywords: Nanowires; time resolved nano x-ray diffraction; Piezoelectricity; Flexoelectricity