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HL: Fachverband Halbleiterphysik
HL 16: Functional Semiconductors for Renewable Energy Solutions I
HL 16.6: Vortrag
Dienstag, 19. März 2024, 11:00–11:15, ER 325
Cobalt nitride thin films for stabilizing nitride-based photoelectrodes — •Matthias Kuhl1,2, Lukas Kohlmaier1,2, Ian D. Sharp1,2, and Johanna Eichhorn1,2 — 1Walter Schottky Institute, Technische Universität München, Germany — 2Physics Department, TUM School of Natural Sciences, Technische Universität München, Germany
For artificial photosynthesis, metal nitride semiconductors evolved over recent years as a promising material class, offering narrow bandgaps that are ideal for visible light absorption and pronounced bond covalency that facilitates long range charge transport. However, these materials suffer from poor stability under realistic operation conditions. One strategy to improve stability is to interface the semiconductor light absorber with conformal and ultra-thin catalytic layers that still permit interfacial charge transport and minimize losses due to parasitic light absorption. In contrast to typically studied oxide protection layers, we use plasma-enhanced atomic layer deposition (PE-ALD) to deposit ultra-thin cobalt nitride films as conformal, stable, and catalytically active coatings. Different characterization techniques are combined to reveal the effect of varying synthesis parameters on the material properties. Explicitly, we demonstrate that the deposition temperature can be employed to tune the film composition and nitrogen content, thereby controlling the optoelectronic properties and catalytic activity. Overall, this work highlights the use of PE-ALD as a promising approach for engineering pure nitride catalyst/semiconductor interfaces to create efficient and stable photoelectrodes.
Keywords: PE-ALD; Nitrides; PEC; Cobalt Nitride; Catalysis