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HL: Fachverband Halbleiterphysik
HL 16: Functional Semiconductors for Renewable Energy Solutions I
HL 16.7: Talk
Tuesday, March 19, 2024, 11:15–11:30, ER 325
Low temperature photoluminescence investigation of boron doped and quenched silicon — •Kevin Lauer1,2, Robin Müller1, Zia Ul-Islam1, Katharina Peh1, Dirk Schulze1, and Stefan Krischok1 — 1Technische Universität Ilmenau, Institut für Physik, Ilmenau, Germany — 2CiS Forschungsinstitut für Mikrosensorik GmbH, Erfurt, Germany
The linking of light-induced degradation (LID) with photoluminescence (PL) peaks has been shown to be very constructive in defect identification in case of indium doped silicon.[1] For boron doped silicon the search after PL peaks, which follow LID treatments, was not successful so far.[2] By applying quenching treatments[3] we were now able to discover a PL peak, which is impacted by LID treatments.[4] The relation of this discovered peak to closely neighbored known peaks is discussed.
[1] K. Lauer, K. Peh, D. Schulze, T. Ortlepp, E. Runge, and S. Krischok, Phys. Status Solidi A, vol. 219, no. 19, p. 2200099, 2022 [2] K. Peh, K. Lauer, A. Flötotto, D. Schulze, and S. Krischok, Phys. Status Solidi A, vol. 219, no. 17, p. 2200180, 2022 [3] M. L. W. Thewalt, U. O. Ziemelis, and R. R. Parsons, Phys. Rev. B, vol. 24, no. 6, p. 3655, 1981. [4] K. Lauer et al., arXiv, Nov. 13, 2023. doi: 10.48550/arXiv.2311.07280.
Keywords: silicon; ASi-Sii-defect; photoluminescence