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Berlin 2024 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 18: 2D Materials and Heterostructures: Emerging Materials and Phenomena

HL 18.13: Vortrag

Dienstag, 19. März 2024, 12:45–13:00, EW 201

Oxidative chemical vapor deposition of highly conductive and transparent polymer layers for contact fabrication in 2D-MoS2-based FET structures — •Jinmei Zhu1,3, Florian Meierhofer1, Marius Eckert1,2, Stefan Wundrack2, and Tobias Voss11Institute of Semiconductor Technology (IHT), TU Braunschweig, Braunschweig, Germany — 2Physikalisch-Technische Bundesanstalt (PTB), Braunschweig, Germany — 3Shijiazhuang College of Applied Technology, Shijiazhuang, China

For 2D MoS2 field-effect transistors (FETs), contact fabrication easily results in damaging the MoS2 channel due to the fragility of the atomically thin structure, making it difficult to reliably achieve high-performance devices. To overcome this challenge, the deposition of highly conductive and transparent polymer layers from the gas phase (oxidative chemical vapor deposition (oCVD)), is a promising approach that can lead to low-defect Ohmic contacts. In this work, we fabricated 2D MoS2 bottom-gated FETs with poly (3, 4- ethylenedioxythiophene) (PEDOT) electrodes. PEDOT is a conductive polymer widely used as a transparent electrode material. We developed two contacting strategies to achieve a low-defect interface: in-situ oCVD electrode growth and electrode transfer method. By these means, we could pattern PEDOT layers and contact them onto MoS2 channels without aggressive chemical and physical treatments. This allowed us to achieve low-defect MoS2 channels with a clean and smooth interface of the PEDOT electrodes, significantly decreasing the charged impurity and interface-roughness scattering processes.

Keywords: 2D semiconductor; field-effect transistor; Ohmic contact; polymer electrode; contacting strategy

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