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HL: Fachverband Halbleiterphysik

HL 18: 2D Materials and Heterostructures: Emerging Materials and Phenomena

HL 18.2: Talk

Tuesday, March 19, 2024, 09:45–10:00, EW 201

Influence of highly charged ion irradiation on the electrical and memory properties of black phosphorus field-effect transistors — •Stephan Sleziona, Osamah Kharsah, Lucia Skopinski, Leon Daniel, Jennifer Schmeink, and Marika Schleberger — Fakultät für Physik und CENIDE, Universität Duisburg-Essen, Lotharstraße 1, D-47057 Duisburg, Germany

Black phosphorus (bP) is one of the more recently discovered layered materials. In particular its high hole mobility and finite, thickness dependent, direct bandgap may pave its way to new applications as optoelectronic devices. Utilizing the hysteresis in the transfer characteristics of bP field-effect transistors (FETs), several approaches to realize non-volatile memory devices have been successfully put forward. This hysteresis is commonly attributed to charge trapping and detrapping in defects and impurities either in the underlying substrate, or in the bP itself. In this work we deliberately introduce additional defects into bP FETs by irradiating the devices with highly charged Xe³⁰⁺ at a kinetic energy of 180 keV to manipulate the electrical and memory properties of the devices. We find an increase of conductivity and p-doping with increasing ion fluence, while other device parameters, like i.e. charge carrier mobility, degrade for the higher irradiation fluences. Most importantly, we find an increase in the width of the hysteresis and the memory window due to the irradiation. By controlling the kinetic energy of the ions, we can demonstrate, that this increase is caused by additional defects in the underlying SiO₂ substrate and not in the bP itself.

Keywords: Black Phosporus; Field-effect transistor; ion irradiation; non-volatile memory device