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HL: Fachverband Halbleiterphysik

HL 18: 2D Materials and Heterostructures: Emerging Materials and Phenomena

HL 18.4: Vortrag

Dienstag, 19. März 2024, 10:15–10:30, EW 201

Tuning properties of 2D Janus MoSSe — •Jennifer Schmeink, Jens Osterfeld, Osamah Kharsah, and Marika Schleberger — Universität Duisburg-Essen, Fakultät für Physik, Germany

Two-dimensional (2D) Janus materials such as MoSSe are defined by their asymmetrical structure, where the transition metal atoms, specifically molybdenum (Mo), are sandwiched between opposing sites of different species of chalcogen atoms, notably selenium (Se) and sulfur (S). This uniquely structured material allows a new way for tuning existing properties of 2D transition metal dichalcogenide (TMDC) materials and new characteristics emerge from the loss of inversion symmetry in the structure.

The method for synthesizing such Janus materials involves utilizing a base TMDC, e.g. molybdenum diselenide (MoSe₂). The process involves the creation of vacancies in the top layer of chalcogen atoms, subsequently filling these vacancies with an additional species [1]. Depending on the process details, this results in Janus MoSSe or in Janus-like MoS_2(1−x)Se_2x alloys, where 0>x>1 and x≠ 0.5. The latter is characterized by the coexistence of Janus MoSSe and MoSe₂ or MoS₂ phases. This constitutes yet another tunable platform for tailoring material properties.

This talk will present studies of the (opto-)electronic properties of Janus MoSSe and its Janus-like alloys. Furthermore, the influence of Se-vacancies in MoSe₂ and the Janus-like alloys will be highlighted and defect related findings discussed.

[1] J. Schmeink et al., Nanoscale (2023), 15, 10834-10841

Keywords: Janus material; (Opto-)electronic properties; Alloy; Defects