Berlin 2024 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 2: 2D Materials and Heterostructures: Photonic Aspects
HL 2.5: Talk
Monday, March 18, 2024, 10:30–10:45, EW 201
Simulation of waveguide-coupled graphene-based double-layer straight and ring modulator — •Pawan Kumar Dubey1, Ashraful Islam Raju1, Rasuole Lukose1, Christian Wenger1,2, and Mindaugas Lukosius1 — 1IHP- Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2BTU Cottbus Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany
On-chip integrated, graphene-based optical modulators are state-of-the-art optoelectronics devices with numerous applications in emerging photonics technologies, providing the advantages of high modulation efficiency, high broadband application and low power consumption. Liu et al.2012 experimentally demonstrated a double-layered straight modulator with a modulation depth of just 0.16 dB/μm for the first time. This design had miniscule waveguide light interaction with the graphene layer, resulting in low modulation efficiency. A novel method emerged to elevate this interaction further, where the graphene layer was integrated with silicon nitride-based ring resonators. Taking this approach as a reference, we present an FDTD simulation of double-layer graphene-based ring modulators. We have studied the design parameters of the ring modulator, such as the radius, shape of the resonator, and graphene area, that affect the modulation efficiency. We have optimised the design of the ring resonator working near the critical coupling condition, achieving a modulation depth of 3.5 dB/V, which is 20 times better than our previously simulated double-layer straight modulator design.
Keywords: Graphene; Modulator; Ring resonator; Modulation depth; Bandwidth