Berlin 2024 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 20: Focus Session: Young Semiconductor Forum

HL 20.5: Invited Talk

Tuesday, March 19, 2024, 11:45–12:15, EW 203

Membrane external-cavity surface-emitting lasers: A review at the first decade of research — •Hermann Kahle — Institute for Photonic Quantum Systems (PhoQS), Center for Optoelectronics and Photonics Paderborn (CeOPP), and Department of Physics, Paderborn University, 33098 Paderborn, Germany

Membrane external-cavity surface-emitting lasers (MECSELs) have emerged as a derivative of vertical-external-cavity surface-emitting lasers (VECSELs). The pursuit of higher output power, particularly in materials with moderate performance characteristics, has driven the innovation of creating extremely thin amplifier membranes within a nearly ideal thermal environment. These gain membranes, sandwiched between transparent heat spreaders, containing nothing else but the active region of a VECSEL (no substrate, no monolithically integrated DBR), caught much attention in recent years. Inserting the gain element into a cavity completes the MECSEL, which has already enabled access to laser wavelengths previously unattainable by VECSELs and has facilitated watt-level output power at room temperature. Furthermore, the MECSEL approach fundamentally enables the production of high-power lasers of the highest beam quality whenever it is possible to produce an LED. Beyond that, the membrane approach offers numerous additional advantages.

A comprehensive discussion of these advantages will be provided, as well as a review of the developments that have contributed to the success of MECSELs. The conclusion will give an overview of the most recent findings and a glimpse into future developments in this field.

Keywords: semiconductor laser; VECSEL; MECSEL; thin device; VCSEL