Berlin 2024 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 21: Heterostructures, Interfaces and Surfaces I

HL 21.3: Talk

Tuesday, March 19, 2024, 10:00–10:15, EW 561

Investigation Of Dielectric Parameters Of ZnO/p-Si Diode At Room Temperature — •Ali Orkun Çağirtekin, Ahmad Ajjaq, Özlem Barin, Pinar Oruç, and Selim Acar — Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

In this study; ZnO/p-Si nanostructure was obtained with a two-step process. First, a ZnO nucleating layer was produced on p-type silicon substrate by the dip coating method. Then, the core-coated sample was exposed to a 95 * and 3-hour hydrothermal reaction and the production of ZnO nanostructures was achieved. Finally, silver contact was applied to the produced structure by thermal evaporation. SEM analysis results show that ZnO nanostructures are coated homogeneously on the silicon substrate without gaps. It was aimed to investigate the performance properties of the produced diode under different conditions for different applications. Current-voltage, capacitance-frequency and conductance-frequency measurements of the ZnO/p-Si diode were measured at room temperature between 2 kHz and 1 MHz. As a result of these measurements, the obtained diode displays a rectification of about seven orders of magnitude at a bias voltage of 4 V. The dielectric constant of the diode at 2 kHz at room temperature was calculated as 13, dielectric loss as 10, and dielectric loss tangent as 0.79. It was also observed that there was a peak in the imaginary part of the electrical modulus. Finally, in the conductivity parameter, it was observed that the conductivity increased as the frequency increased. According to the results obtained, it was seen that the ZnO surface layer was suitable for capacitor applications.

Keywords: ZnO; IV; Dielectric