Berlin 2024 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 21: Heterostructures, Interfaces and Surfaces I
HL 21.5: Talk
Tuesday, March 19, 2024, 10:45–11:00, EW 561
Effectiveness of an AlSb dislocation filter layer in the epitaxy of GaSb on Si(001) — •Karl Graser1, Audrey Gilbert2, Steffen Richter1, Jean-Baptiste Rodriguez2, Eric Tournié2, and Achim Trampert1 — 1Paul-Drude Institut für Festkörperelektronik, Leibnitz-Institut im Forschungsverbund Berlin e.V., Berlin, Germany — 2Institut d'Electronique et des Systèmes , University of Montpellier, CNRS, F- 34000, France
The direct epitaxial growth of III-V semiconductors on Si (001) opens the door to the integration of III-V-based photonic devices with Si integrated circuits. Especially for the epitaxial growth of GaSb on Si with its high lattice mismatch, methods must be found to reduce the resulting huge number of threading dislocations which negatively affect the device performance. In the present study, the impact of a strained AlSb filter layer on the dislocation reduction for GaSb-on-Si epitaxy is investigated by transmission electron microscopy techniques. The site-specific measurements of dislocation density at different positions along the growth direction are used to calculate the filter efficiency, which is clearly related to the formation of misfit dislocation networks at the interfaces between AlSb and GaSb. It is shown that the nature of the dislocation networks, their line directions and Burgers vectors, is governed by epitaxial strain relief and complex dislocation reactions in the interfaces, and finally determines the effectiveness of threading dislocation reduction process.
Keywords: III-V-on-Si; dislocation filter; transmission electron microscopy