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Berlin 2024 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 22: Focus Session: Young Semiconductor Forum

HL 22.17: Poster

Dienstag, 19. März 2024, 11:00–15:30, Poster F

Towards SiC as a Platform for Hybrid Quantum Technologies — •Philipp Bredol1, Felix David1, B. Demiralp1, Z. Niu1, N. S. Jagtap4, A. Hochreiter5, G. V. Astakhov4, A. Erbe4, H. B. Weber5, and E. M. Weig1,2,31Technical University of Munich, Chair of Nano and Quantum Sensors, 85748 Munich, Germany — 2Munich Center for Quantum Science and Technology, 80799 Munich, Germany — 3TUM Center for Quantum Engineering, 85748 Garching, Germany — 4Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany — 5Friedrich-Alexander-Universität Erlangen-Nürnberg, Chair of Applied Physics, 91058 Erlangen, Germany

Established nano electronic devices rely mostly on classical physics. Quantum effects offer to go beyond the possibilities of classical devices, but are difficult to exploit due to their fragile nature. Hybrid devices aim to combine the advantages of both worlds by combining quantum and classical elements. However, integration on a single hybrid chip is a challenging task, because materials and process chemistry have to be compatible.

Silicon carbide (SiC) is an exceptional material that is feasible for both classical and quantum electronics: Classical transistors are already being fabricated from SiC on an industrial scale for power electronics. At the same time, SiC hosts color centers with lifetimes competitive with the nitrogen-vacancy center in diamond, which makes it interesting for quantum sensing and quantum information applications. Last but not least, SiC is well suited for high-Q nanomechanics, which can mediate couplings between degrees of freedom that only weakly couple in a direct manner. We explore the possibilities of SiC based hybrid quantum technologies from the nanomechanical perspective. As a first step, we compare the nanomechanical properties of devices fabricated from the 3C and 4H SiC polytypes using various fabrication methods.

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