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HL: Fachverband Halbleiterphysik

HL 25: Oxide Semiconductors I

HL 25.11: Talk

Wednesday, March 20, 2024, 12:30–12:45, ER 325

Two-dimensional electron gas in polar-discontinuity doped LaInO₃/BaSnO₃ heterostructure grown by plasma-assisted molecular beam epitaxy — •Georg Hoffmann¹, Martina Zupancic², Martin Albrecht², and Oliver Bierwagen¹ — ¹Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5-7, 10117 Berlin, Germany — ²Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany

Transparent semiconducting oxides (TSO’s) are key players for new (opto-)electronic devices. In the search for suitable TSOs, the wide-bandgap semiconductor BaSnO₃ has been reported to provide the highest room temperature electron mobilities within the perovskite oxides - up to 320 cm²/Vs for La doped bulk material [1]. Interfacing the undoped, nonpolar BaSnO₃ with the closely lattice-matched, polar LaInO₃ is predicted to create a two-dimensional electron gas (2DEG) with a charge carrier density of up to 2×10¹⁴/cm² due to polar-discontinuity doping [2]. Here, we demonstrate the adsorption-controlled growth of LaInO₃/BaSnO₃ heterostructures grown by plasma-assisted molecular beam epitaxy. The formation of the 2DEG at the LaInO₃/BaSnO₃ interface is confirmed by capacitance-voltage and van der Pauw-Hall measurements. The extracted sheet electron concentrations above 2×10¹³/cm² and RT electron mobilities above 100 cm²/Vs pave the way for further device studies.

[1] H. J. Kim et al., Appl. Phys. Express, 5, 061102 (2012). [2] K. Krishnaswamy et al., Appl. Phys. Lett. 108, 083501 (2016).

Keywords: two-dimensional electron gas; perovskites; molecular beam epitaxy; BaSnO3