Berlin 2024 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 26: 2D Materials and Heterostructures: Quantum Emitters and Defects
HL 26.4: Talk
Wednesday, March 20, 2024, 10:15–10:30, EW 201
Controlling the emission intensity of hBN emitters by graphene gates — •Corinne Steiner1, 2, Rebecca Rahmel1, Frank Volmer3, Patricia Pesch1, Kenji Watanabe4, Takashi Taniguchi5, Bernd Beschoten1, Christoph Stampfer1,2, and Annika Kurzmann1,6 — 1JARA-FIT and 2nd Institute of Physics A, RWTH Aachen University, Germany — 2Peter Grünberg Institute, FZ Jülich, Germany — 3AMO GmbH, Aachen, Germany — 4Research Center for Functional Materials, NIMS, Japan — 5International Center for Materials Nanoarchitectonics, NIMS, Japan — 6Physics Institute 2, University of Cologne, Germany
Two-dimensional hexagonal boron nitride is a host material for bright and stable single-photon emitters. By applying strain or electric fields, their emission properties can be tuned, rendering them promising candidates for quantum photonic applications [1,2]. Here, we present voltage-dependent photoluminescence measurements of a quantum emitter in dual-graphene-gated hBN, showing a gate-controllable, step-like, fivefold increase in emission intensity. Furthermore, we observe a correlation between the reported increase of emitter intensity and the direction of the leakage current through the hBN. This suggests photo-induced tunneling processes within the hBN as an explanation for the observed intensity switching. Thus, our results are a step towards understanding the charge dynamics between graphene gates and hBN quantum emitters.
[1] Nano Lett. 18, 4710 (2018)
[2] Light: Science & Applications 11, 186 (2022)
Keywords: hBN emitter; 2D materials; gate control