Berlin 2024 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 3: Quantum Dots and Wires: Transport
HL 3.10: Talk
Monday, March 18, 2024, 12:15–12:30, EW 202
Silicon Nanowire Transistors: Device Characteristics to Sensing Applications — •Sayantan Ghosh1,2, Ahmad Echresh1, Ulrich Kentsch1, Slawomir Prucnal1, Vaishali Vardhan3, Subhajit Biswas3, Justin Holmes3, Artur Erbe1,2, and Yordan M. Georgiev1,4 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — 2TU Dresden, Dresden, Germany — 3School of Chemistry, University College Cork, Cork, Ireland — 4Institute of Electronics, Bulgarian Academy of Sciences, Sofia, Bulgaria
Field-effect transistors based on silicon nanowires have been extensively used for sensing applications since the compact nanoscale structures allow excellent regulation of electrostatic potential across the nanowire channel. Sensors based on Junctionless Nanowire Transistors (JNT) have shown excellent sensitivity in liquid phases but they have not yet been operated in the gas phase.
In this work, we report the fabrication and characterisation of silicon-based JNT devices and their initial tests as gas sensors. Silicon-on-insulator wafers are doped by ion implantation and flash lamp annealing. Device patterning is based on electron beam lithography, inductively-coupled reactive ion etching, metal deposition and lift-off.
JNT sensor tests exhibited characteristic shifts in the transfer curve and a systematic increase and decrease of p- and n-type current, respectively, under the influence of different gases like NO2 and NH3 confirming potential suitability as gas sensors for detecting atmospheric radicals.