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HL: Fachverband Halbleiterphysik
HL 3: Quantum Dots and Wires: Transport
HL 3.11: Vortrag
Montag, 18. März 2024, 12:30–12:45, EW 202
frequency effect on channel blockade in a two- path gate-defined quantum dot — •hatef ghannadi maragheh1, johannes c. bayer1, nikolai spitzer2, arne ludwig2, and rolf j. haug1 — 1Institut für Festkörperphysik, Leibniz Universität Hannover, D-30167 Hanover, Germany — 2Ruhr-Universität Bochum, Lehrstuhl für angewandte Festkörperphysik, Universitätsstraße 150, 44801 Bochum, Germany
Knowing how any quantum device, like semiconductor-based qubit, is functioning under any condition is of vital importance to characterizing nano devices. This would be more difficult in case the structure of the device gets complicated. The device under the investigation consists of split-gate quantum dots in a GaAs/AlGaAs heterostructure where one side has a quantum dot while the other side is free. The frequency of the measurement ranged from 280 Hz to 1980 Hz.
Electron transport through the quantum dot system has been investigated for different conditions [1] including frequency [2,3] and two path cases [4,5]. For two path case, while one side has higher probability for electron transport compare to the other side, as the frequency changes, the transport behavior of the free side also changes due to the fact that the conductivity of the quantum dot is influenced by the frequency. But, these changes become less explicit as the number of electrons in the quantum dot is reduced. Furthermore, the correspondence between differential conductance for a fixed value for the plunger gate for both sides, has been investigated.
Keywords: quantum dot; Electron transport; Frequency; two- path; channel blockade